Hg0.1Zn0.9Te

semiconductor

· Hg0.1Zn0.9Te

Hg₀.₁Zn₀.₉Te is a mercury-zinc telluride alloy belonging to the II-VI semiconductor family, formed by substituting a small fraction of zinc with mercury in zinc telluride. This narrow-bandgap material is primarily investigated for infrared detection and imaging applications, where it can operate in the medium-wavelength infrared (MWIR) region; its mercury content allows bandgap engineering to achieve sensitivity in wavelength ranges difficult to access with pure ZnTe or CdZnTe. While not as widely deployed as HgCdTe (mercury-cadmium telluride), this alloy represents an alternative approach to tuning infrared detector performance and is of research interest for thermal imaging, spectroscopy, and military/security sensing applications where mercury substitution offers different toxicity or processing trade-offs compared to cadmium-based analogs.

infrared detectorsthermal imaging sensorsMWIR spectroscopymilitary/security sensingbandgap-engineered semiconductorsresearch/development materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.830	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg0.1Zn0.9Te

Electrical Properties

Regulatory Screening

Environmental

Export Control