Hg0.1Cd0.9Se
semiconductorHg₀.₁Cd₀.₉Se is a mercury-cadmium-selenide mixed alloy belonging to the II-VI semiconductor family, engineered to occupy a specific position in the infrared bandgap spectrum between cadmium selenide and mercury selenide end members. This narrow-bandgap material is primarily used in infrared detection and thermal imaging applications where sensitivity in the mid-to-long wavelength infrared (MWIR/LWIR) regions is required; it competes with lead-tin telluride and antimony-based III-V compounds for cooled detector arrays and offers advantages in wavelength selectivity and fabrication compatibility for focal plane arrays. The material is generally classified as research-grade or niche-production due to mercury's toxicity and manufacturing complexity, though it remains important in military, space, and scientific instrumentation where performance justifies the handling requirements.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |