Hg0.08Zn0.92Te

semiconductor

· Hg0.08Zn0.92Te

Hg0.08Zn0.92Te is a mercury-zinc telluride alloy belonging to the II-VI semiconductor family, formed by partial substitution of mercury into zinc telluride. This narrow-bandgap material is primarily used in infrared detection and thermal imaging systems, where its sensitivity to mid- and long-wavelength infrared radiation makes it valuable for applications requiring high detectivity in the 8–14 μm range. The mercury doping reduces the bandgap compared to pure ZnTe, enabling room-temperature or moderate-temperature operation in photodetectors and focal plane arrays, though thermal management and material stability require careful consideration in system design.

infrared photodetectorsthermal imaging sensorsfocal plane arraysnight vision systemsmilitary surveillanceresearch-grade semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.900	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg0.08Zn0.92Te

Electrical Properties

Regulatory Screening

Environmental

Export Control