Hg0.06Zn0.94Te

semiconductor

· Hg0.06Zn0.94Te

Hg₀.₀₆Zn₀.₉₄Te is a mercury-doped zinc telluride compound semiconductor, representing a narrow-bandgap II-VI material engineered for infrared detection applications. This alloy composition is primarily used in advanced infrared imaging systems and thermal sensing technologies where its narrow bandgap enables detection of mid-to-long wavelength infrared radiation. The material is notable for its potential in high-sensitivity thermal imaging and radiometric measurement systems compared to wider-bandgap alternatives, though it remains largely in research and specialized military/aerospace applications due to the toxicity considerations of mercury-containing compounds.

infrared detectorsthermal imaging sensorslong-wavelength IR sensingmilitary surveillance systemsradiometric measurement

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.120	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg0.06Zn0.94Te

Electrical Properties

Regulatory Screening

Environmental

Export Control