HfZrO2F is a fluorine-doped mixed oxide ceramic based on hafnium and zirconium oxides, representing a research-phase material in the family of high-k dielectric oxides. This composition combines the thermal stability and high refractive index of hafnia-zirconia systems with fluorine doping to modify phase structure, defect chemistry, and dielectric properties—making it of particular interest for advanced electronic and optical applications where conventional single-component oxides fall short. The material is notable for potential use in next-generation capacitors, gate dielectrics, and optical coatings where the dopant tailors grain boundary behavior and reduces leakage current compared to undoped alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.677 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.180 | eV/atom | — |