HfZnO is a hafnium-zinc oxide ceramic compound combining the refractory properties of hafnium oxide with zinc oxide's semiconducting characteristics. This material is primarily of research interest for thin-film applications in microelectronics and optoelectronics, where the hafnium component provides thermal stability and high dielectric strength while zinc oxide contributes transparency and electrical functionality. Engineers consider HfZnO when designing next-generation transparent conducting oxides, gate dielectrics for advanced transistors, or wide-bandgap semiconductor devices requiring improved thermal and electrical performance compared to single-oxide alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3123 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.904 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1015 | eV/atom | — |