HfZnO3 is a ternary oxide semiconductor compound combining hafnium and zinc oxides, belonging to the class of mixed-metal oxide semiconductors. This material is primarily under investigation in research contexts for optoelectronic and high-frequency electronic applications, where its wide bandgap and potential for tunable properties offer advantages over single-component oxide semiconductors. HfZnO3 is notable for potential use in transparent electronics, UV detection, and advanced gate dielectrics, though it remains largely in the development phase compared to more mature materials like ZnO or HfO2.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.188 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.000 | eV | — | ||
| ↳ | 1.200 | eV | — | ||
| ↳ | 0.5955 range 0.000–1.191median of 2 measurements | eV | — | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | — | ||
| ↳ | -0.09562 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -0.6600 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.7098 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.546 | eV/atom | — | ||
| ↳ | 0.9800 | eV/atom | — | ||
| ↳ | -2.213 | eV/atom | — |