HfZnO₂S is a ternary oxide-sulfide ceramic compound combining hafnium, zinc, oxygen, and sulfur, representing an emerging class of mixed-anion ceramics with potential for optoelectronic and semiconductor applications. This is primarily a research material rather than an established commercial ceramic; it belongs to the broader family of wide-bandgap semiconductors and mixed metal chalcogenides being investigated for photocatalysis, photodetection, and thin-film device applications where conventional binary oxides have limitations. The addition of sulfur anions to a hafnium-zinc oxide framework can modify electronic band structure and photocatalytic activity, making it of interest in materials science development cycles rather than current high-volume industrial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.000160 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.820 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data