HfTlO₂N is an experimental oxynitride ceramic containing hafnium, thallium, and nitrogen, belonging to the family of advanced refractory ceramics and high-entropy oxide compounds. This material is primarily investigated in research settings for high-temperature structural applications and electronic device development, where its mixed-valence composition and nitrogen incorporation offer potential advantages in thermal stability, hardness, and electrical properties compared to conventional binary oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.00124 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.460 | eV/atom | — |