HfTiON2

semiconductor

· HfTiON2

HfTiON₂ is an experimental ceramic oxynitride compound combining hafnium, titanium, oxygen, and nitrogen phases, developed as a research material within the refractory and advanced ceramic family. This material is being investigated for high-temperature structural applications and thin-film semiconductor devices, where its mixed-phase composition offers potential advantages in thermal stability, hardness, and electrical properties compared to single-phase oxides or nitrides. As an early-stage research compound, it remains primarily relevant to materials scientists and device engineers exploring next-generation coatings, gate dielectrics, or extreme-environment components.

high-temperature coatingssemiconductor gate dielectricsresearch thin filmsrefractory applicationsadvanced ceramics development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.000	eV	—
Magnetic Moment(μB)	0.0000439	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfTiON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control