HfTeSe4 is a mixed-halide chalcogenide ceramic compound combining hafnium with tellurium and selenium, representing an emerging class of layered materials studied for electronic and photonic applications. This material belongs to the family of transition metal chalcogenides, which are primarily investigated in research settings for their potential in semiconductor devices, optoelectronics, and solid-state physics rather than established industrial production. Engineers evaluating HfTeSe4 would consider it for next-generation applications where layered crystal structure, tunable band-gap properties, or anisotropic transport characteristics offer advantages over conventional semiconductors or oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 36.09 | GPa | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 23.73 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.338 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7760 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 79.46 | - | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.03390 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6712 | eV/atom | — |