HfTe5 is a layered transition metal chalcogenide ceramic compound composed of hafnium and tellurium, belonging to the family of quasi-2D materials with strong van der Waals interactions between atomic layers. This is primarily a research material currently under investigation for potential applications in topological electronics and quantum devices, rather than an established industrial ceramic; its notable characteristics include tunable electronic band structure and the ability to be exfoliated into atomically thin sheets, making it of particular interest to researchers exploring next-generation semiconducting and topological material platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | 88.25 | meV/atom | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.617 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -126 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00200 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4218 | eV/atom | — |