HfTe₂ is a layered transition metal dichalcogenide ceramic compound combining hafnium and tellurium in a 1:2 stoichiometric ratio. This material is primarily of research and developmental interest rather than a mature industrial ceramic, positioned within the family of two-dimensional materials and layered compounds that show promise for electronic and photonic applications. The weak van der Waals bonding between layers makes HfTe₂ a candidate for exfoliation into few-layer or monolayer forms, enabling exploration in next-generation semiconductor devices, topological materials research, and quantum electronic systems where layered crystal structure offers functional advantages over conventional bulk ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 2,115.1 | ksi | — | ||
| ↳ | 4,146.6 | ksi | — | ||
Exfoliation Energy(Eexf) | 108 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2100 | - | — | ||
Shear Modulus(G)2 entries | 1,685.5 | ksi | — | ||
| ↳ | 3,073.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2809 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 157.4 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -6.437 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00490 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8426 | eV/atom | — |