HfSrO3

HfSrO3 is a perovskite-structured oxide ceramic compound combining hafnium and strontium oxides, belonging to the family of high-k dielectric materials. This is primarily a research-phase material investigated for advanced semiconductor device applications where traditional silicon dioxide reaches performance limits, particularly in gate dielectric applications for scaled CMOS technology and emerging high-frequency or power electronics. Its appeal lies in its potential to enable thinner functional gate layers while maintaining low leakage current—a key advantage over conventional oxides as transistor dimensions continue to shrink.