HfSrO3

semiconductor
· HfSrO3

HfSrO3 is a perovskite-structured oxide ceramic compound combining hafnium and strontium oxides, belonging to the family of high-k dielectric materials. This is primarily a research-phase material investigated for advanced semiconductor device applications where traditional silicon dioxide reaches performance limits, particularly in gate dielectric applications for scaled CMOS technology and emerging high-frequency or power electronics. Its appeal lies in its potential to enable thinner functional gate layers while maintaining low leakage current—a key advantage over conventional oxides as transistor dimensions continue to shrink.

advanced gate dielectricssemiconductor device scalinghigh-k capacitor applicationspower electronics substratesresearch/emerging technology

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
eV
eV
Magnetic Moment(μB)2 entries
μB
μB
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)2 entries
eV/atom
eV/atom
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.