HfSnO3 is a ternary oxide semiconductor compound combining hafnium and tin oxides, representing an emerging material in the perovskite and pyrochlore oxide family. This material is primarily of research interest for next-generation electronic and photonic devices, where it is being investigated for applications requiring wide bandgap semiconductors with potential advantages in high-temperature stability and radiation resistance compared to conventional silicon-based alternatives. The hafnium-tin oxide system is notable for its potential in advanced gate dielectrics, memory devices, and photocatalytic applications, though practical industrial deployment remains limited as the material is still under active development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 173.5 | GPa | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 90.58 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.604 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.9740 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 2.452 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 17.96 | - | — | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | — | ||
| ↳ | -0.000216 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1037 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -2.458 | eV/atom | — | ||
| ↳ | 1.160 | eV/atom | — | ||
| ↳ | -2.758 | eV/atom | — |