HfSiTe is an experimental ternary ceramic compound combining hafnium, silicon, and tellurium—a material family still primarily in research development rather than established industrial production. This compound represents early-stage exploration of refractory ceramics with potential applications in high-temperature and semiconductor device contexts, where the layered or quasi-2D crystal structure (suggested by its exfoliation energy data) could enable novel electronic or thermal management properties. Engineers would consider this material only for specialized research applications or prototype development, not for conventional structural or commercial use.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 31.00 | GPa | — | ||
| ↳ | 62.73 | GPa | — | ||
Exfoliation Energy(Eexf) | 63.66 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.1900 | - | — | ||
Shear Modulus(G)2 entries | 26.88 | GPa | — | ||
| ↳ | 45.98 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 8.186 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 76.04 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -13.96 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6877 | eV/atom | — |