HfSiTe — Properties & Data | MatWorld

HfSiTe

ceramic

· HfSiTe

HfSiTe is an experimental ternary ceramic compound combining hafnium, silicon, and tellurium—a material family still primarily in research development rather than established industrial production. This compound represents early-stage exploration of refractory ceramics with potential applications in high-temperature and semiconductor device contexts, where the layered or quasi-2D crystal structure (suggested by its exfoliation energy data) could enable novel electronic or thermal management properties. Engineers would consider this material only for specialized research applications or prototype development, not for conventional structural or commercial use.

research/prototype developmenthigh-temperature ceramicssemiconductor substratesthermoelectric devicesrefractory materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Filter by

Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	31.00	GPa	DFT
↳	62.73	GPa	DFT · OptB88vdW
Exfoliation Energy(Eexf)	63.66	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.1900	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	26.88	GPa	DFT
↳	45.98	GPa	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	8.186	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)	0.000	eV	DFT · OptB88vdW
Dielectric Constant (Relative Permittivity)(εr)	76.04	-	DFT · OptB88vdW
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000242	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000302	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-13.96	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	-15.15	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.6877	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfSiTe

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental