HfSiSe is a ternary ceramic compound combining hafnium, silicon, and selenium—a layered material system that bridges traditional refractory ceramics and emerging two-dimensional materials research. This is primarily an experimental composition studied for its potential in high-temperature applications and electronic devices; it belongs to the family of transition-metal chalcogenides being investigated as alternatives to conventional semiconductors and thermal barriers. The material's layered structure and moderate exfoliation energy suggest interest in nanoscale device engineering and heterostructure integration, though industrial deployment remains limited compared to established hafnium-based ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 11,996.6 | ksi | — | ||
| ↳ | 16,554.6 | ksi | — | ||
Exfoliation Energy(Eexf) | 77.46 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G)2 entries | 8,139.3 | ksi | — | ||
| ↳ | 11,398.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3109 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -12.53 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.9926 | eV/atom | — |