HfSe₃ is a layered transition metal chalcogenide ceramic compound composed of hafnium and selenium, belonging to the family of van der Waals materials with potentially tunable electronic and mechanical properties. This is primarily a research material currently being investigated for applications leveraging its layered crystal structure and weak interlayer bonding, rather than an established engineering ceramic. The compound shows promise in nanoelectronics, energy storage, and thermal management applications where anisotropic properties and mechanical exfoliation into thin sheets could be advantageous, though commercial adoption remains limited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 39.14 | GPa | — | ||
Exfoliation Energy(Eexf) | 58.53 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 25.91 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.221 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2040 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 13.04 | - | — | ||
| ↳ | 19.52 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -87.85 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000300 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.045 | eV/atom | — |