HfSe2 — Properties & Data | MatWorld

HfSe2

Name: HfSe2
Brand: MatWorld

semiconductor

· HfSe2

HfSe2 is a layered transition metal dichalcogenide (TMD) semiconductor composed of hafnium and selenium, part of an emerging class of two-dimensional materials. Currently a research-stage compound rather than a mature commercial material, HfSe2 is investigated primarily for next-generation electronics, optoelectronics, and energy storage applications where its layered structure enables exfoliation into atomically thin sheets. Engineers consider HfSe2 and similar TMDs as potential alternatives to graphene and silicon in scenarios requiring tunable bandgaps, direct band transitions, or unique mechanical-electrical coupling in nanoscale devices.

2D electronics and field-effect transistorsoptoelectronic sensors and photodetectorsenergy storage (batteries and supercapacitors)thermoelectric devicesflexible and wearable electronicsquantum materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	39.49	GPa	DFT · OptB88vdW
Exfoliation Energy(Eexf)	92.05	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2200	-	DFT · OptB88vdW
Shear Modulus(G)	29.03	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	7.338	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.4700	eV	DFT · OptB88vdW
↳	2.200	eV	Measured
Dielectric Constant (Relative Permittivity)(εr)	59.74	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)	13.84	-	DFT · OptB88vdW
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.01040	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-1.383	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfSe2

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

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