HfSe2 is a layered transition metal dichalcogenide (TMD) semiconductor composed of hafnium and selenium, part of an emerging class of two-dimensional materials. Currently a research-stage compound rather than a mature commercial material, HfSe2 is investigated primarily for next-generation electronics, optoelectronics, and energy storage applications where its layered structure enables exfoliation into atomically thin sheets. Engineers consider HfSe2 and similar TMDs as potential alternatives to graphene and silicon in scenarios requiring tunable bandgaps, direct band transitions, or unique mechanical-electrical coupling in nanoscale devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 39.49 | GPa | — | ||
Exfoliation Energy(Eexf) | 92.05 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2200 | - | — | ||
Shear Modulus(G) | 29.03 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.338 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.200 | eV | — | ||
| ↳ | 0.5340 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 59.74 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -273.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01040 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.383 | eV/atom | — |