HfSbO2N

ceramic

· HfSbO2N

HfSbO₂N is an experimental ceramic compound combining hafnium, antimony, oxygen, and nitrogen—part of the oxynitride family of advanced ceramics. Research into this material focuses on high-temperature structural applications and electronic device integration, where its mixed-valence chemistry and potential for tailored band gaps make it a candidate for thermal barrier coatings, refractory components, and next-generation semiconductor gate dielectrics. This class of material remains primarily in development; its adoption depends on demonstrating thermal stability, mechanical reliability, and manufacturing scalability against established alternatives like yttria-stabilized zirconia or conventional oxide insulators.

thermal barrier coatingsrefractory applicationssemiconductor gate dielectricshigh-temperature structural ceramicsadvanced ceramics research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.8808	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.880	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfSbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental