HfS2 — Properties & Data | MatWorld

HfS2

Name: HfS2
Brand: MatWorld

semiconductor

· HfS2

Hafnium disulfide (HfS2) is a layered transition metal dichalcogenide semiconductor with a hexagonal crystal structure, belonging to the family of two-dimensional materials that can be exfoliated into atomically thin sheets. Currently in the research and development phase, HfS2 is being investigated for next-generation nanoelectronics, optoelectronics, and energy storage applications where its tunable band gap and layered geometry offer advantages over conventional bulk semiconductors. Its potential appeal to engineers lies in enabling flexible electronics, high-sensitivity photodetectors, and battery/supercapacitor electrodes where ultrathin, mechanically compliant materials provide performance or integration benefits that silicon-based alternatives cannot match.

2D semiconductor researchFlexible electronicsPhotodetectors and sensorsBattery electrodesNanoelectronic devicesOptoelectronic applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	46.27	GPa	DFT · OptB88vdW
Exfoliation Energy(Eexf)	86.83	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2200	-	DFT · OptB88vdW
Shear Modulus(G)	34.26	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	5.985	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.078	eV	DFT · OptB88vdW
↳	1.684	eV	DFT · TBmBJ
↳	2.900	eV	Measured
Dielectric Constant (Relative Permittivity)(εr)	43.26	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	9.733	-	DFT · OptB88vdW
↳	8.281	-	DFT · TBmBJ
Electron Effective Mass(m*e)	1.243	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	2.223	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00416	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00222	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-308.2	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	293	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	29.47	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-1.705	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfS2

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