Hafnium disulfide (HfS2) is a layered transition metal dichalcogenide semiconductor with a hexagonal crystal structure, belonging to the family of two-dimensional materials that can be exfoliated into atomically thin sheets. Currently in the research and development phase, HfS2 is being investigated for next-generation nanoelectronics, optoelectronics, and energy storage applications where its tunable band gap and layered geometry offer advantages over conventional bulk semiconductors. Its potential appeal to engineers lies in enabling flexible electronics, high-sensitivity photodetectors, and battery/supercapacitor electrodes where ultrathin, mechanically compliant materials provide performance or integration benefits that silicon-based alternatives cannot match.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 46.27 | GPa | — | ||
Exfoliation Energy(Eexf) | 86.83 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2200 | - | — | ||
Shear Modulus(G) | 34.26 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.985 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.900 | eV | — | ||
| ↳ | 1.078 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 43.26 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -308.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.705 | eV/atom | — |