Hafnium oxide (HfO₂) is a refractory ceramic compound valued for its extremely high melting point and thermal stability, making it suitable for extreme-environment applications. It is widely used in aerospace thermal protection systems, nuclear fuel cladding, and high-temperature coatings, where its resistance to oxidation and chemical attack provides significant performance advantages over alternative ceramics. In semiconductor manufacturing, HfO₂ serves as a high-κ dielectric material in advanced gate oxides, enabling continued device scaling where traditional silicon dioxide becomes prohibitive.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 197.4 | GPa | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 97.43 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 12.02 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1938 | eV/atom | — | ||
Formation Energy(ΔHf) | -2.683 | eV/atom | — |