Hafnium trioxide (HfO₂) is a high-performance ceramic oxide compound belonging to the refractory oxide family, valued for its exceptional thermal stability and chemical inertness at extreme temperatures. It is primarily used in advanced semiconductor applications as a high-k dielectric gate material in transistor technology, thermal barrier coatings for aerospace engines, and nuclear fuel cladding systems where superior corrosion resistance and radiation tolerance are critical. Engineers select HfO₂ over traditional silica-based ceramics when operation exceeds 1000°C or when dimensional stability and resistance to aggressive chemical environments are non-negotiable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 28,189.5 | ksi | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 14,809.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3266 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.605 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4017 | eV/atom | — | ||
Formation Energy(ΔHf) | -2.459 | eV/atom | — |