HfMgO3 is a ternary oxide ceramic compound combining hafnium and magnesium oxides, belonging to the perovskite or related oxide semiconductor family. This material is primarily of research interest for high-temperature applications and advanced electronic/photonic devices, where its wide bandgap and thermal stability offer potential advantages over conventional oxides. While not yet established in mainstream industrial production, HfMgO3 represents an emerging platform for exploring hafnium-based ceramics in extreme environment and next-generation semiconductor contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25,342.4 | ksi | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 13,178.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2245 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.042 | eV | — | ||
| ↳ | 2.700 | eV | — | ||
| ↳ | 1.118 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 10.32 | - | — | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | — | ||
| ↳ | 0.0000637 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -81.76 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6555 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -2.321 | eV/atom | — | ||
| ↳ | 1.000 | eV/atom | — | ||
| ↳ | -2.844 | eV/atom | — |