HfLaO3 is a hafnium-lanthanum oxide ceramic compound that combines the high-κ dielectric properties of hafnium oxide with the thermal and chemical stability of lanthanum oxide. This material is primarily investigated for advanced semiconductor applications where conventional gate dielectrics reach performance limits, and represents an important class of rare-earth doped high-κ oxides being developed to extend device scaling in microelectronics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 0.2901 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -3.262 | eV/atom | — | ||
| ↳ | 1.000 | eV/atom | — |