HfKO3

semiconductor
· HfKO3

HfKO3 is a hafnium-potassium oxide ceramic compound belonging to the family of high-κ (high dielectric constant) oxides under active research for advanced microelectronics. This material is primarily investigated as a gate dielectric or insulating layer in next-generation semiconductor devices, where it offers potential advantages over conventional silicon dioxide in enabling continued transistor scaling and reduced power consumption. While not yet widely commercialized in high-volume production, HfKO3 represents part of the broader exploration of alternative oxide systems to replace traditional SiO2 as dimensional requirements approach physical limits.

gate dielectric layerssemiconductor device insulationMOSFET gate stacksadvanced microelectronics researchtransistor scaling applicationslow-power integrated circuits

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
eV
eV
Magnetic Moment(μB)2 entries
μB
μB
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)2 entries
eV/atom
eV/atom
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.