HfInON2

ceramic

· HfInON2

HfInON2 is an experimental oxynitride ceramic compound composed of hafnium, indium, oxygen, and nitrogen elements, representing a mixed-anion ceramic system. This material falls within the broader class of advanced oxynitrides and transition-metal-based ceramics being investigated for high-performance applications requiring thermal stability and chemical resistance. Research on this composition targets next-generation semiconductor devices, high-temperature structural applications, and barrier coatings where the combination of hafnium's refractory properties and indium's electronic functionality offers potential advantages over conventional single-oxide alternatives.

high-temperature coatingsadvanced semiconductorsgate dielectric layersresearch/experimental materialsthermal barrier systemselectronic device integration

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.01402	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.360	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfInON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental