HfInO3

ceramic

· HfInO3

HfInO3 is a hafnium-indium oxide ceramic compound belonging to the family of high-permittivity (high-k) dielectric materials. This is primarily a research and development material being investigated for advanced microelectronic and optoelectronic applications where conventional dielectrics reach performance limits. The material is of particular interest in gate dielectrics for next-generation semiconductor devices, ferroelectric memory structures, and integrated photonics, where its combination of hafnium and indium oxides offers potential advantages in permittivity, thermal stability, and integration with existing semiconductor processing. Engineers would evaluate this material when conventional SiO2 or Al2O3 dielectrics cannot meet requirements for miniaturization, operating temperature, or electrical performance in deeply scaled or high-frequency applications.

semiconductor gate dielectricsferroelectric memory (FeRAM)high-k capacitorsintegrated photonicsadvanced CMOS nodesresearch/early-stage development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.1693	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfInO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental