HfInO2S

ceramic

· HfInO2S

HfInO2S is an experimental ceramic compound combining hafnium, indium, oxygen, and sulfur—a mixed-metal oxide-sulfide belonging to the broader family of high-κ dielectric and wide-bandgap semiconductor materials. Research interest in this composition stems from potential applications in advanced electronic devices where hafnium oxides are already established, with the indium and sulfur additions investigated for modifying bandgap, thermal stability, or defect properties. This material remains primarily in the research phase rather than established manufacturing, making it relevant for engineers exploring next-generation semiconductor substrates, gate dielectrics, or optoelectronic components.

advanced semiconductor dielectricshigh-κ gate materialswide-bandgap electronicsoptoelectronic devicesmaterials research and development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.3416	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.460	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfInO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental