HfInO2N

ceramic

· HfInO2N

HfInO₂N is an experimental ternary ceramic compound combining hafnium oxide, indium oxide, and nitrogen, developed primarily for advanced microelectronics and high-temperature applications. This material belongs to the family of high-κ dielectrics and metal oxides, with nitrogen incorporation designed to improve thermal stability, oxidation resistance, and interface properties in nanoscale device structures. Though not yet commercialized at scale, it represents research into next-generation gate dielectrics and barrier layers as transistor scaling approaches physical limits.

advanced semiconductor gateshigh-κ dielectricsthin-film barriersthermal oxidation resistancenanoelectronics researchatomic layer deposition targets

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.000873	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.820	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfInO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental