HfInO2F

ceramic

· HfInO2F

HfInO2F is a hafnium-indium oxide fluoride ceramic compound, representing an emerging material in the oxide-fluoride ceramic family. This composition combines the high thermal stability and refractory properties of hafnium oxides with indium oxide's electrical characteristics and fluorine's ability to modify crystal structure and defect chemistry. The material is primarily of research and development interest for advanced electronic and photonic applications where the synergistic properties of mixed rare/transition metal oxides with fluorine doping are being explored.

Advanced ceramics researchHigh-temperature dielectricsOptical coatings developmentMicroelectronics gate dielectricsThermal barrier coatings (experimental)Photonic materials (exploratory)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000236	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.340	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfInO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental