HfInN3

ceramic

· HfInN3

HfInN3 is a ternary nitride ceramic composed of hafnium, indium, and nitrogen, representing an emerging compound in the wide-bandgap semiconductor and refractory ceramic family. This material is primarily of research interest rather than established commercial production, with potential applications in high-temperature electronics, optoelectronics, and advanced refractory systems where the thermal stability and chemical inertness of hafnium nitride can be combined with indium's electronic properties. Engineers would consider HfInN3 for next-generation high-power or high-temperature device applications where conventional semiconductors reach performance limits, though material availability and processing routes remain active areas of development.

High-temperature electronicsWide-bandgap semiconductorsRefractory coatingsResearch/development compoundsPower device substratesThermal barrier systems

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.01653	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.060	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental