HfIn2I6 is a ternary iodide ceramic compound containing hafnium and indium, belonging to the halide perovskite family of materials. This is a research-phase compound primarily investigated for optoelectronic and radiation detection applications, where its large bandgap and high atomic number elements offer potential advantages in photon conversion and particle detection. The material represents an emerging class of inorganic halides being explored as alternatives to organic-inorganic perovskites, with particular interest in applications requiring chemical stability and radiation hardness.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1948 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.821 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 6.827 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.03190 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.7220 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data