HfHfON2

semiconductor

· HfHfON2

HfHfON2 is an experimental hafnium oxynitride semiconductor compound combining hafnium, oxygen, and nitrogen phases. This material family is primarily explored in advanced microelectronics research for high-κ dielectric and gate stack applications, where it offers potential advantages in thermal stability and band alignment compared to conventional oxides. Its development is driven by the semiconductor industry's need for materials that can scale to smaller feature sizes while maintaining electrical performance in next-generation logic and memory devices.

high-κ gate dielectricsadvanced semiconductor gatesresearch-phase microelectronicsthermal barrier coatings (potential)thin-film transistors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.800	eV	—
Magnetic Moment(μB)	0.00000144	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfHfON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control