HfHfO3
ceramic· HfHfO3
HfO₂ (hafnium oxide) is a high-k ceramic compound belonging to the refractory oxide family, characterized by exceptional thermal stability and a wide bandgap. It is primarily used in advanced semiconductor gate dielectrics as a replacement for traditional SiO₂ in sub-28 nm CMOS technology nodes, where it enables continued device scaling while reducing gate leakage currents. The material is also explored for optical coatings, thermal barrier applications, and emerging high-temperature structural ceramics, making it notable for applications requiring both electrical performance and extreme thermal resistance.
semiconductor gate dielectricsadvanced CMOS devicesoptical coatings and filtersthermal barrier coatingshigh-temperature ceramicsnuclear reactor materials
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.