HfGeTe4 is a ternary ceramic compound combining hafnium, germanium, and tellurium elements, representing an emerging material in the chalcogenide family. This material is primarily of research interest for thermoelectric and semiconductor applications, where the combination of elements offers potential for tunable electronic and thermal properties. While not yet established in high-volume industrial production, hafnium-based chalcogenides are being investigated for solid-state energy conversion, thermal management systems, and next-generation optoelectronic devices due to their ability to modulate phonon transport and electronic structure.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2520 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3820 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -199.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000900 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4597 | eV/atom | — |