HfGdO3 is a hafnium gadolinium oxide ceramic compound combining the high refractory properties of hafnia (HfO2) with the rare-earth dopant gadolinium (Gd), producing a mixed-oxide ceramic material. This compound is primarily of research and emerging-technology interest, investigated for high-temperature structural applications and as an alternative gate dielectric in advanced semiconductor devices where its large band gap and thermal stability offer advantages over conventional oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.1710 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.847 | eV/atom | — |