HfGaON2

ceramic

· HfGaON2

HfGaON2 is an oxynitride ceramic compound containing hafnium, gallium, oxygen, and nitrogen elements, representing a materials research composition within the refractory oxynitride family. This compound is primarily of academic and developmental interest for next-generation high-temperature and electronic applications, as oxynitride ceramics offer potential advantages in thermal stability, oxidation resistance, and electronic properties compared to conventional oxides or nitrides alone. The hafnium-gallium oxynitride system is being explored in research contexts for advanced semiconductor interfaces, high-temperature structural components, and potential barrier layer applications in microelectronic devices.

semiconductor interfaces and gateshigh-temperature ceramics researchthermal barrier applicationsadvanced refractory materialsmicroelectronics development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.01704	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.080	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfGaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental