HfGaO3 is an ternary oxide ceramic composed of hafnium, gallium, and oxygen, belonging to the family of high-k dielectric materials and advanced ceramic oxides. This material is primarily of research and development interest for next-generation semiconductor applications, where it serves as a potential high-permittivity gate dielectric or buffer layer in microelectronic devices, offering potential advantages in thermal stability and integration with advanced silicon processing compared to conventional alternatives like SiO2 or HfO2 alone.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · PBE | ||
Magnetic Moment(μB)2 entries | 0.00600 | μB | DFT | ||
| ↳ | -0.1952 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.833 | eV/atom | DFT | ||
| ↳ | 0.7600 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data