HfGaO3

ceramic

· HfGaO3

HfGaO3 is an ternary oxide ceramic composed of hafnium, gallium, and oxygen, belonging to the family of high-k dielectric materials and advanced ceramic oxides. This material is primarily of research and development interest for next-generation semiconductor applications, where it serves as a potential high-permittivity gate dielectric or buffer layer in microelectronic devices, offering potential advantages in thermal stability and integration with advanced silicon processing compared to conventional alternatives like SiO2 or HfO2 alone.

semiconductor gate dielectricsadvanced CMOS technologyhigh-k dielectric researchthin-film device layersthermal barrier coatings (potential)microelectronic materials development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)2 entries	0.00600	μB	—
↳	-0.1952	μB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)2 entries	-1.833	eV/atom	—
↳	0.7600	eV/atom	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfGaO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental