HfGaO2N

semiconductor

· HfGaO2N

HfGaO₂N is an experimental quaternary oxynitride semiconductor combining hafnium, gallium, oxygen, and nitrogen—a research compound derived from the high-κ dielectric family, particularly related to hafnia-based gate oxides and gallium nitride technology. This material is being explored in advanced microelectronics and power semiconductor research for next-generation device architectures that require enhanced dielectric properties, thermal stability, and interface quality, potentially offering advantages over conventional binary oxides or nitrides in gate stack engineering and wide-bandgap semiconductor applications.

advanced gate dielectricspower semiconductor interfaceshigh-κ dielectric researchwide-bandgap transistorsintegrated circuit development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.200	eV	—
Magnetic Moment(μB)	-0.000364	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.240	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfGaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control