HfGaN3

ceramic

· HfGaN3

HfGaN3 is a hafnium gallium nitride ceramic compound that combines the refractory properties of hafnium with the wide bandgap semiconductor characteristics of gallium nitride. This material exists primarily in research and early-stage development contexts, where it is being investigated for extreme-temperature and high-power-density applications that demand superior thermal stability and electrical performance beyond conventional GaN or AlN ceramics.

High-temperature power electronicsWide-bandgap semiconductor devicesExtreme environment thermal managementNext-generation RF/microwave componentsResearch phase materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.089	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.520	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental