Hafnium trichloride (HfCl₃) is an inorganic ceramic compound and halide salt of hafnium, primarily used as a precursor material in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes rather than as a structural ceramic. It serves as a volatile, transportable source of hafnium for depositing high-performance oxide and nitride thin films in semiconductor manufacturing, microelectronics, and advanced coatings. Engineers select HfCl₃ over alternative hafnium precursors due to its favorable volatility and decomposition characteristics, making it particularly valuable for creating high-κ dielectric films, barrier layers, and refractory coatings in demanding applications where hafnium's thermal stability and chemical resistance are essential.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1.080 | GPa | — | ||
Shear Modulus(G) | -12.59 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.958 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.07650 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.683 | eV/atom | — |