HfBO2N

semiconductor

· HfBO2N

HfBO2N is a hafnium-based oxynitride ceramic compound combining hafnium, boron, oxygen, and nitrogen elements. This material belongs to the family of advanced refractory and wide-bandgap semiconductors, primarily explored in research contexts for high-temperature and high-power electronic applications. The incorporation of boron and nitrogen into hafnium oxide creates a material with potential for improved thermal stability, hardness, and electrical properties compared to conventional hafnium oxide, making it of interest for next-generation semiconductor devices and protective coatings in extreme environments.

high-temperature semiconductorswide-bandgap electronicsprotective coatingsresearch compoundsrefractory applicationsextreme-environment electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.600	eV	—
Magnetic Moment(μB)	-0.000459	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.060	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfBO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control