HfAs2 is an intermetallic ceramic compound combining hafnium and arsenic, belonging to the class of refractory ceramics with potential semiconductor or thermal management properties. This material exists primarily in research and development contexts rather than widespread industrial use; it is of interest to materials scientists studying high-temperature compounds and narrow-band semiconductors. Engineers would consider HfAs2 primarily for exploratory applications in extreme thermal environments or specialized electronic devices where the chemical stability and density characteristics of hafnium arsenides offer advantages over conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 16,640.3 | ksi | — | ||
Shear Modulus(G) | 10,846.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3433 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -5.500 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7494 | eV/atom | — |