HfAlO3

ceramic
· HfAlO3

HfAlO3 is a ternary oxide ceramic composed of hafnium, aluminum, and oxygen, belonging to the class of high-κ dielectric materials. It is primarily investigated as a gate dielectric in advanced semiconductor devices and integrated circuits, where it offers superior dielectric properties compared to traditional silicon dioxide, particularly for sub-28 nm process nodes. This material is notable for its thermal stability, relatively high dielectric constant, and lower leakage current, making it an attractive alternative to legacy dielectrics in next-generation microelectronics, though it remains largely in research and early-stage manufacturing phases.

Gate dielectrics (semiconductor devices)Advanced integrated circuitsMOSFET technologyHigh-κ capacitor applicationsNanoelectronics research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Magnetic Moment(μB)2 entries
μB
μB
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)2 entries
eV/atom
eV/atom
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.