Hf8Te4 is a hafnium telluride compound belonging to the metal chalcogenide semiconductor family, characterized by a 2:1 hafnium-to-tellurium ratio. This material is primarily of research and exploratory interest rather than established commercial production, investigated for potential applications in thermoelectric devices, infrared optics, and advanced semiconductor nanostructures where the hafnium-tellurium system offers tunable electronic properties and potential advantages in high-temperature or radiation-resistant environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00450 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4820 | eV/atom | — |